NTE584 Silicon Schottky Diode
Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn-on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Forward Continuous Current (TA = +25C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA Surge Non-Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Maximum Lead Temperature (During Soldering, 10s at 4mm from Case), TL . . . . . . . . . . . . +230C Thermal Resistance, Junction-to-Ambient (Note 1), RJA . . . . . . . . . . . . . . . . . . . . . . . . . . 400C/W Note 1. On infinite heat sink with 4mm lead length. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristic Breakdown Voltage Forward Voltage Continuous Reverse Current Dynamic Characteristic Overvoltage Coefficient Minority Carrier Life Time C VR = 0V, f = 1MHz IF = 5mA, Krakauer Method - - - - 1.2 100 pF ps V(BR) VF IR IR = 10A IF = 1mA, Note 2 IF = 35mA, Note 2 VR = 15V, Note 2 20 - - - - - - - - 0.41 1.0 0.1 V V V A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse width 300s, Duty Cycle < 2%.
1.000 (25.4) Min .200 (5.08) Max
.022 (.509) Dia Max Color Band Denotes Cathode
.090 (2.28) Dia Max
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